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2SA1225O PDF预览

2SA1225O

更新时间: 2024-02-23 14:45:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 102K
描述
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA

2SA1225O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大集电极电流 (IC):1.5 A
配置:Single最小直流电流增益 (hFE):120
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):15 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

2SA1225O 数据手册

 浏览型号2SA1225O的Datasheet PDF文件第2页浏览型号2SA1225O的Datasheet PDF文件第3页浏览型号2SA1225O的Datasheet PDF文件第4页 
2SA1225  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1225  
Power Amplifier Applications  
Driver Stage Amplifier Applications  
Unit: mm  
·
·
High transition frequency: f = 100 MHz (typ.)  
T
Complementary to 2SC2983  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
160  
160  
5  
V
V
V
A
A
CBO  
CEO  
EBO  
I
1.5  
C
Base current  
I
0.3  
B
Ta = 25°C  
1.0  
Collector power  
P
W
C
dissipation  
Tc = 25°C  
15  
Junction temperature  
T
150  
°C  
°C  
j
JEDEC  
JEITA  
Storage temperature range  
T
55 to 150  
stg  
TOSHIBA  
2-7B1A  
Weight: 0.36 g (typ.)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2002-07-23  

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