Datasheet > 2SA1225O

2SA1225O

更新时间： 2024-02-01 09:46:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	102K
描述
TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 1.5A I(C) \| TO-251AA

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技术参数
数据手册

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2SA1225O 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	1.5 A
配置：	Single	最小直流电流增益 (hFE)：	120
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	15 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

2SA1225O 数据手册

2SA1225

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= −160 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

−1.0

―

µA

CBO

Emitter cut-off current

= −5 V, I = 0

EBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

= −10 mA, I = 0

−160

−5

(BR) CEO

(BR) EBO

= −1 mA, I = 0

―

(Note)

DC current gain

= −5 V, I = −100 mA

―

240

Collector emitter saturation voltage

Base-emitter voltage

= −500 mA, I = −50 mA

―

−1.5

−1.0

―

CE (sat)

= −5 V, I = −500 mA

Transition frequency

= −10 V, I = −100 mA

100

MHz

Collector output capacitance

= −10 V, I = 0, f = 1 MHz

―

Note: h classification O: 70 to 140, Y: 120 to 240

Marking

A1225

Product No.

Lot No.

Classification

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

2002-07-23

123 4

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