5秒后页面跳转
捷配首页

Datasheet > 2SA1049_07
2SA1049_07 PDF预览

2SA1049_07

更新时间： 2024-11-21 04:25:47
品牌 Logo 应用领域
东芝 - TOSHIBA 音频放大器
页数 文件大小 规格书
3页 342K
描述
Audio Frequency Amplifier Applications

阅读下载

中文翻译

获取价格

2SA1049_07 数据手册

 浏览型号2SA1049_07的Datasheet PDF文件第2页浏览型号2SA1049_07的Datasheet PDF文件第3页 
2SA1049  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1049  
Audio Frequency Amplifier Applications  
Unit: mm  
•
•
•
•
•
•
Small package.  
High breakdown voltage: V  
= −120 V  
CEO  
High h  
h
= 200~700  
linearity: h  
FE: FE  
Excellent h  
(I = −0.1 mA)/h  
(I = −2 mA) = 0.95 (typ.)  
FE C  
FE  
FE  
C
Low noise: NF = 1dB (typ.), 10dB (max)  
Complementary to 2SC2459.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−120  
−120  
−5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
−100  
−20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
JEDEC  
JEITA  
―
―
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
j
125  
T
stg  
−55~125  
TOSHIBA  
2-4E1A  
Weight: 0.13 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −120 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
−0.1  
−0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= −5 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= −6 V, I = −2 mA  
200  
⎯
700  
CE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −10 mA, I = −1 mA  
⎯
⎯
⎯
⎯
100  
4
−0.3  
⎯
V
CE (sat)  
C
B
f
V
V
V
= −6 V, I = −1 mA  
MHz  
pF  
T
CE  
CB  
CE  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
ob  
E
= −6 V, I = −0.1 mA  
C
Noise figure  
NF  
⎯
1.0  
10  
dB  
f = 1 kHz, R = 10 kΩ  
G
Note: h classification GR: 200~400, BL: 350~700  
FE  
1
2007-11-01  
123

中文翻译

下载PDF

与2SA1049_07相关器件

型号 品牌 获取价格 描述 数据表
2SA1049BL ETC

获取价格

 		TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | SPAK
2SA1049-BL TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Pur
2SA1049GR ETC

获取价格

 		TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | SPAK
2SA1049-GR TOSHIBA

获取价格

 		TRANSISTOR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Pur
2SA1050 SAVANTIC

获取价格

 		Silicon PNP Power Transistors
2SA1050 JMNIC

获取价格

 		Silicon PNP Power Transistors
2SA1050 ISC

获取价格

 		Silicon PNP Power Transistors
2SA1050 NJSEMI

获取价格

 		Trans GP BJT PNP 30V 0.1A 3-Pin MPAK
2SA1051 ISC

获取价格

 		Silicon PNP Power Transistors
2SA1051 JMNIC

获取价格

 		Silicon PNP Power Transistors

与2SA1049_07相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证