Datasheet > 2SA1036_10

2SA1036_10

更新时间： 2024-11-07 07:29:27

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	698K
描述
PNP Silicon General Purpose Transistor

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中文翻译

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数据手册

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2SA1036_10 数据手册

2SA1036

-0.5A, -40V

PNP Silicon General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

SOT-23

ꢀ

I_CMax.= -500 mA

Low V_CE(sat). Ideal for low-voltage operation.

ꢀ

Top View

C B

CLASSIFICATION OF h_FE

2SA1036-P

82~180

2SA1036-Q

2SA1036-R

180~390

Product-Rank

Range

120~270

Marking

Millimeter

Min. Max.

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

PACKAGE INFORMATION

2.80

2.10

1.20

0.89

1.78

0.30

0.09

0.45

0.08

0.18

0.60

0.177

Package

MPQ

LeaderSize

7’ inch

0.6 REF.

SOT-23

0.89

1.02

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_CBO

Ratings

-40

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Currrent

V_CEO

-32

V_EBO

-5

I_C

-500

150

Total Power Dissipation

Junction & Storage Temperature

P_D

T_J, T_STG

150, -55 ~ 150

℃

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

-40

-32

-5

I_C=-100μA, I_E=0

I_C=-1mA, I_B=0

I_E=-100μA, I_C=0

-1

-0.4

390

μA

V_CB=-20V, I_E=0

Emitter cut-off current

I_EBO

V_EB= -4V, I_C=0

Collector-emitter saturation voltage

DC current gain

V_CE(sat)

h_FE

I_C=-100mA, I_B=-10mA

V_CE=-3V, I_C=-10mA

V_CE=-5V, I_C=-20mA, f=100MHz

V_CB=-10V, I_E=0, f=1MHz

Transition frequency

f_T

200

MHz

Collector output capacitance

C_OB

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Dec-2010 Rev. B

Page 1 of 2

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