2SA1036KRGP

更新时间： 2024-11-01 13:04:07

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	98K
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2SA1036KRGP 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SA1036KPT

SURFACE MOUNT

Medium Power PNP Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere

APPLICATION

* Medium Power Amplifier .

FEATURE

* Surface mount package. (SOT-23)

* Low saturation voltage V

SOT-23

CE(sat)=-0.4V(max.)(IC=-100mA)

* Low cob. Cob=7.0pF(Typ.)

* PC= 200mW (mounted on ceramic substrate).

* High saturation current capability.

(1)

(2)

(3)

CONSTRUCTION

* PNP Silicon Transistor

* Epitaxial planner type

(

)

(

)

.055 1.40

.028 0.70

MARKING

* HFE(P):ST

* HFE(Q):TT

(

)

(

)

.047 1.20

.020 0.50

(

)

.103 2.64

.086 (2.20)

* HFE(R):2F-

(3)C

(

)

.045 1.15

CIRCUIT

(

)

.033 0.85

Dimensions in inches and (millimeters)

SOT-23

(2)E

(1)B

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

-40

UNITS

Volts

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current DC

Open Base

VCEO

VEBO

-32

-5

Volts

mAmps

Open Collector

-500

-10

Peak Collector Current

Peak Base Current

ICM

IBM

Total Power Dissipation

Storage Temperature

Junction Temperature

Operating Ambient Temperature

TA ≤ 25^OC; Note 1

PTOT

TSTG

300

-55

+150

^oC

TAMB

-55

^oC

Note

1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.

2. Measured at Pulse Width 300 us, Duty Cycle 2%.

2002-10

12 3

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