2SA1015
M C C
2SA1015-O
2SA1015-Y
2SA1015-GR
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
•
•
•
•
Capable of 0.4Watts of Power Dissipation.
PNP Silicon
Plastic-Encapsulate
Transistor
Collector-current 0.15A
Collector-base Voltage 50V
Operating and storage junction temperature range: -55OC to +150OC
x
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
x
Marking:A1015
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
B
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
50
50
---
---
---
---
Vdc
Vdc
(I =0.1mAdc, IB=0)
C
V(BR)CBO
Collector-Base Breakdown Voltage
(I =100uAdc, IE=0)
C
I
Collector Cutoff Current
(VCB=50Vdc, IE=0)
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
0.1
0.1
uAdc
uAdc
CBO
C
IEBO
ON CHARACTERISTICS
hFE
DC Current Gain
70
---
---
---
400
0.3
---
(I =2.0mAdc, VCE=6.0Vdc)
C
VCE(sat)
VBE(sat)
VBE
Collector-Emitter Saturation Voltage
(I =100mAdc, I =10mAdc)
Vdc
Vdc
Vdc
C
B
D
Base-Emitter Saturation Voltage
(I =100mAdc, I =10mAdc)
1.1
C
B
Base-Emitter Voltage
(IE=310mAdc)
1.45
E
C
B
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=1.0mAdc, VCE=10Vdc, f=30MHz)
---
G
80
MHz
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
DIM
A
B
C
D
MAX
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
.190
.190
.590
.020
.160
.104
4.33
4.30
13.97
0.36
3.30
2.44
FE (1)
CLASSIFICATION OF H
Rank
Range
O
70-140
Y
GR
200-400
E
G
120-240
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Revision: 5
2007/03/01