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2SA1015K PDF预览

2SA1015K

更新时间: 2024-02-21 17:13:48
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 252K
描述
Plastic Encapsulate Transistors

2SA1015K 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SA1015K 数据手册

 浏览型号2SA1015K的Datasheet PDF文件第2页 
2SA1015K  
PNP Type  
Elektronische Bauelemente  
Plastic Encapsulate Transistors  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
SOT-23  
Min  
Dim  
A
B
C
D
G
H
J
Max  
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
ƔFEATURES  
.
.
.
Power Dissipation  
PCM: 0.2 W ( Ta = 25 к )  
A
L
Collector Current  
ICM: -0.15 A  
3
3
Collector-Base Voltage  
V(BR)CBO: -50 V  
S
C
Top View  
B
1
2
1
K
L
2
V
G
1.BASE  
S
2.EMITTER  
3.COLLECTOR  
V
All Dimension in mm  
H
J
D
K
ƔABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25к)  
TYPE NUMBER  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
ICEO  
IEBO  
hFE  
VCE (sat)  
VBE(sat)  
TEST CONDITIONS  
IC = -100 µA, IE = 0 A  
IC = -0.1 mA, IB = 0 A  
IE = -10 µA, IC = 0 A  
VCB = -50 V, IE = 0 A  
VCE = -50 V, IB = 0 A  
VEB = -5 V, IC = 0 A  
VCE = -6 V, IC = -2 mA  
IC = -100 mA, IB = -10 mA  
IC = -100 mA, IB = -10 mA  
VCE = 10 V, IC = 1 mA,  
f = 30 MHz  
Min.  
-50  
-50  
-5  
-
-
-
130  
-
Typ.  
Max.  
-
-
UNIT  
V
V
-
-
-
-
-
-
-
-
-
-
V
-0.1  
-0.1  
-0.1  
400  
-0.3  
-1.1  
µA  
µA  
µA  
V
V
-
Transition Frequency  
fT  
80  
-
-
MHz  
Operating and Storage Junction  
Temperature Range  
к
TJ, TSTG  
-
- 55 ~ +150  
ƔhFE VALUES ARE CLASSIFIED AS FOLLOWS:  
Rank  
hFE  
L
H
130 ~ 200  
200 ~ 400  
Marking: BA  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
Page 1 of 2  
01-Jun-2002 Rev. A  

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