Datasheet > 2SA1015-GR-B

2SA1015-GR-B

更新时间： 2024-11-21 07:45:03

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美微科 - MCC		/
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2页	71K
描述
Transistor

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中文翻译

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数据手册

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2SA1015-GR-B 数据手册

2SA1015

M C C

2SA1015-O

2SA1015-Y

2SA1015-GR

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Micro Commercial Components

Features

•

Capable of 0.4Watts of Power Dissipation.

PNP Silicon

Plastic-Encapsulate

Transistor

Collector-current 0.15A

Collector-base Voltage 50V

Operating and storage junction temperature range: -55^OC to +150^OC

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Marking:A1015

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

---

Vdc

(I =0.1mAdc, I_B=0)

V_(BR)CBO

Collector-Base Breakdown Voltage

(I =100uAdc, I_E=0)

Collector Cutoff Current

(V_CB=50Vdc, I_E=0)

Emitter Cutoff Current

(V_EB=5.0Vdc, I_C=0)

0.1

uAdc

CBO

I_EBO

ON CHARACTERISTICS

h_FE

DC Current Gain

---

400

0.3

---

(I =2.0mAdc, V_CE=6.0Vdc)

V_CE(sat)

V_BE(sat)

V_BE

Collector-Emitter Saturation Voltage

(I =100mAdc, I =10mAdc)

Vdc

Base-Emitter Saturation Voltage

(I =100mAdc, I =10mAdc)

1.1

Base-Emitter Voltage

(I_E=310mAdc)

1.45

SMALL-SIGNAL CHARACTERISTICS

f_T

Transistor Frequency

(I_C=1.0mAdc, V_CE=10Vdc, f=30MHz)

---

MHz

DIMENSIONS

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

FE (1)

CLASSIFICATION OF H

Rank

Range

70-140

200-400

120-240

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Revision: 5

2007/03/01

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2SA1015G-Y-T92-B	UTC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2SA1015G-Y-T92-K	UTC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2SA1015-H	KEXIN	获取价格	PNP Transistors