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2SA1015-GR-AP-HF PDF预览

2SA1015-GR-AP-HF

更新时间: 2024-11-20 20:11:07
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
3页 564K
描述
Small Signal Bipolar Transistor, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

2SA1015-GR-AP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SA1015-GR-AP-HF 数据手册

 浏览型号2SA1015-GR-AP-HF的Datasheet PDF文件第2页浏览型号2SA1015-GR-AP-HF的Datasheet PDF文件第3页 
2SA1015-O  
2SA1015-Y  
2SA1015-GR  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Capable of 0.4Watts of Power Dissipation.  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
Collector-current: -0.15A  
Collector-base Voltage: -50V  
Operating and storage junction temperature range: -55OC to +125OC  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
Marking:A1015  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
Compliant. See ordering information)  
TO-92  
·
Halogen free available upon request by adding suffix "-HF"  
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-Emitter Breakdown Voltage  
-50  
-50  
-5  
---  
---  
Vdc  
Vdc  
B
(I =-0.1mAdc, IB=0)  
C
Collector-Base Breakdown Voltage  
(I =-100uAdc, IE=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =-100uAdc, IC=0)  
E
I
Collector Cutoff Current  
(VCB=-50Vdc, IE=0)  
Emitter Cutoff Current  
---  
-0.1  
-0.1  
uAdc  
uAdc  
CBO  
C
IEBO  
---  
(VEB=-5.0Vdc, IC=0)  
ON CHARACTERISTICS  
hFE  
DC Current Gain  
70  
---  
---  
400  
-0.3  
-1.1  
---  
(I =-2.0mAdc, VCE=-6.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
Vdc  
Vdc  
(I =-100mAdc, I =-10mAdc)  
C
B
Base-Emitter Saturation Voltage  
D
(I =-100mAdc, I =-10mAdc)  
C
B
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(IC=-1.0mAdc, VCE=-10Vdc, f=30MHz)  
E
---  
80  
MHz  
E
C
C
B
B
COB  
NF  
Collector Output Capacitance  
(VCB=-10Vdc, IE=0,f=1MHz)  
Noise Figure  
---  
---  
7.0  
pF  
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
G
6.0  
dB  
(VCE=-6Vdc, IC=-0.1mAdc,f=1KHz,Rg=10K)  
DIMENSIONS  
INCHES  
MM  
FE (1)  
CLASSIFICATION OF H  
DIM  
A
B
C
D
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
NOTE  
Rank  
Range  
O
70-140  
Y
GR  
200-400  
120-240  
0.63  
3.68  
2.67  
5.60  
E
Straight Lead  
Bent Lead  
G
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 3  
Revision: I  
2013/04/02  

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