2SA1012

更新时间： 2024-02-09 07:03:36

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	114K
描述
isc Silicon PNP Power Transistor

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2SA1012 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1012

ELECTRICAL CHARACTERISTICS

T_C=25℃ unless otherwise specified

SYMBOL

PARAMETER

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

I_C= -10mA ; I_B= 0

-50

I_C= -3A; I_B= -0.15A

V_CB= -50V ; I_E= 0

-0.4

-1.2

-1

V_CE

V_BE

(sat)

I_CBO

μA

I_EBO

h_FE-1

h_FE-2

f_T

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-1

DC Current Gain

I_C= -1A ; V_CE= -1V

I_C= -3A ; V_CE= -1V

I_C= -1A ; V_CE= -4V

I_E= 0; V_CB= -10V; f_test= 1MHz

240

DC Current Gain

Current-Gain—Bandwidth Product

Output Capacitance

MHz

C_OB

170

Switching Times

Turn-on Time

0.1

1.0

0.1

μs

t_on

t_stg

t_f

I_C= -3A ,R_L= 10Ω,

I_B1= -I_B2= -0.15A,V_CC= -30V

Storage Time

Fall Time

h_FE-1Classifications

70-140

120-240

isc Website：www.iscsemi.cn

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