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2SA1012B PDF预览

2SA1012B

更新时间: 2024-11-19 14:55:03
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 782K
描述
TO-252-2L

2SA1012B 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-252-2L Plastic-Encapsulate Transistors  
2SA1012B TRANSISTOR (PNP)  
TO-252-2L  
FEATURES  
z
z
z
-2A,-50V Middle Power Transistor  
Suitable for Middle Power Driver  
2
Low Collector-emitter saturation voltage  
1
1. BASE  
3
2. COLLECTOR  
3. EMITTER  
APPLICATIONS  
z
z
z
Middle Power Driver  
LED Driver  
Power Supply  
Equivalent Circuit  
MARKING  
A1012B= Device code  
Solid dot = Green molding compound device,  
A1012B  
XXXX  
if none, the normal device  
.X..ꢀ/ꢁꢂꢃ  
Front side  
MAXIMUM RATINGS ( Ta=25unless otherwise noted )  
Parameter  
Symbol  
VCBO  
Limit  
Unit  
Collector-Base Voltage  
-50  
V
Collector-Emitter Voltage  
VCEO  
VEBO  
IC  
-50  
-6  
V
V
Emitter-Base Voltage  
Collector Current  
-2  
A
(1)  
Collector Power Dissipation  
PC  
1.25  
100  
W
Thermal Resistance From Junction To Ambient  
Operation Junction and Storage Temperature Range  
RθJA  
/W  
TJ,Tstg  
-55~+150  
(1). Mounted on a substrate  
www.jscj-elec.com  
1
Rev. - 2.1  

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