是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.02 | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 70 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 25 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 60 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1012G-O-TF3-T | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SA1012G-O-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
2SA1012G-O-TN3-T | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
2SA1012G-R1-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
2SA1012G-R-TF3-T | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
2SA1012G-R-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
2SA1012G-R-TN3-T | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
2SA1012G-x-TA3-T | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION | |
2SA1012G-x-TF3-T | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION | |
2SA1012G-x-TM3-T | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION |