Datasheet > 2SA1012(TO-252-2L)

2SA1012(TO-252-2L)

更新时间： 2024-11-19 04:27:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	2012K
描述
Transistor

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中文翻译

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数据手册

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2SA1012(TO-252-2L) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-252 Plastic-Encapsulate Transistors

2SA1012 TRANSISTOR (PNP)

FEATURES

TO-252-2L

1.BASE

HIGH CURRENT SWITCHING APPLICATIONS.

Low Collector Saturation Voltage

: V_CE(SAT)= - 0.4V(MAX) at I_C= - 3A

High Speed Swithing Time : t_stg= 1.0us (Typ.)

Complementary to 2SC2562

2.COLLECTOR

3.EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-60

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-5

P_C

1.5

℃

T_j

150

-55-150

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-60

-50

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-1mA, I_E=0

I_C=-1mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-50V, I_E=0

-1

μA

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

DC current gain

h_FE(1)

V_CE=-1V, I_C=-1A

V_CE=-1V, I_C=-3A

I_C=-3A, I_B=150mA

V_CE=-4V, I_C=-1A

V_CB=-10V, I_E=0, f=1MHz

240

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

-0.2

-0.9

-0.4

-1.2

V_BE(SAT)

f_T

C_ob

t_on

t_stg

t_f

MHz

Collector output capacitance

Turn-on Time

Switching

Storage Time

time

170

0.1

1.0

0.1

V_CC=-30V,I_C=-3A,

I_B1=-I_B2=-0.15A

Fall Time

*Pulse test: t_p≤300μS, δ≤0.02.

CLASSIFICATION OF h_FE

Rank

70-140

120-240

Range

A,Aug,2011

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