生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.74 |
外壳连接: | ANODE | 配置: | SINGLE |
最大直流栅极触发电流: | 0.2 mA | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大均方根通态电流: | 4 A |
断态重复峰值电压: | 400 V | 重复峰值反向电压: | 400 V |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2P4M-CY | NEC |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC PAC | |
2P4M-CY-AZ | NEC |
获取价格 |
暂无描述 | |
2P4M-YA | NEC |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202, PLA | |
2P4M-YA-AZ | NEC |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC PAC | |
2P4M-YB | NEC |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202, PLA | |
2P4M-YB-AZ | NEC |
获取价格 |
暂无描述 | |
2P4M-YC | NEC |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202, PLA | |
2P4M-YC-AZ | NEC |
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暂无描述 | |
2P50 | UTC |
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P-CH | |
2P5M | TGS |
获取价格 |
Triacs sensitive gate |