Datasheet > 2P5M

2P5M

更新时间： 2024-10-30 07:29:19

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描述
Triacs sensitive gate

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2P5M 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

Triacs sensitive gate

2P4M 2P5M 2P6M

GENERAL DESCRIPTION

Passivated thyristors in a plastic envelope, intended for use in

applications requiring high bidirectional blocking voltage capability

and high thermal cycling performance. Typical applications include

motor control, industrial domestic lighting, heating and staticand

switching.

ABSOLUTE MAXIMUM RATINGS

( Ta = 25 C)

Typ

Parameter

Symbol

Unit

2P4M 2P5M 2P6M

Repetitive peak off-state

voltages

V_DRM

V_RRM

500

600

700

RMS on-state current

I_T(RMS)

I_TSM

2.0

Non-repetitive peak

on-state current

Max. Operating Junction

Temperature

110

T_j

^oC

TO-202

Storage Temperature

T_stg

-45~150

( Ta = 25 ^OC)

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

V_DRM

V_RRM

500

Repetitive peak off-state voltages

RMS on-state current

~700

I_T(RMS)full sine wave; T_mb107 ^oC

2.0

On-state voltage

Holding current

V_T

I_T=4A

2.2

I_H

V_D= 12 V; I_GT= 0.1 A

V_D= 12 V; I_T= 0.1 A

Gate trigger current

Gate trigger voltage

I_GT

0.2

0.8

V_GT

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与2P5M相关器件

型号	品牌	获取价格	描述	数据表
2P5M-AY	NEC	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, PLASTIC PAC
2P5M-BY	NEC	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, PLASTIC PAC
2P5M-CY	NEC	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, PLASTIC PAC
2P5M-YA	NEC	获取价格	暂无描述
2P5M-YB	NEC	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, PLASTIC PAC
2P5M-YC	NEC	获取价格	暂无描述
2P6M	NEC	获取价格	Opto-Electronic Devices(NEPOC)
2P6M	TGS	获取价格	Triacs sensitive gate
2P6M-AZ	NEC	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC PAC
2P6M-BY	NEC	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-202, PLA