Datasheet > 2N7236_10

2N7236_10

更新时间： 2022-09-16 16:12:32

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	120K
描述
P-CHANNEL MOSFET

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数据手册

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2N7236_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Gate Charge:

On-State Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q_g(on)

Q_gs

Q_gd

35.2

V_GS= -10V, I_D= -18A

_DS= -50V

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

Switching time tests:

Turn-on delay time

Rinse time

Turn-off delay time

Fall time

I_D= -11A, V_GS= -10Vdc,

Gate drive impedance =

9.1Ω,

t_d(on)

t_r

t_d(off)

t_f

_DD= -50Vdc

di/dt ≤ 100A/µs, V_DD

30V,

≤

Diode Reverse Recovery Time

t_rr

280

I_D= -18A

T4-LDS-0061 Rev. 2 (101873)

Page 2 of 4

123 4

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