Datasheet > 2N7002NXAK

2N7002NXAK

更新时间： 2023-09-03 20:29:21

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	274K
描述
60 V, single N-channel Trench MOSFETProduction

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2N7002NXAK 数据手册

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2N7002NXAK

60 V, single N-channel Trench MOSFET

017aaa469

017aaa470

-3

-4

-5

-6

0.20

10 V

(A)

4.5 V

3.0 V

2.5 V

0.15

(1)

(2)

(3)

2.3 V

0.10

0.05

= 2.0 V

(V)

T_j= 25 °C

T_j= 25 °C; V_DS= 5 V

(1) minimum values

(2) typical values

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

(3) maximum values

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

017aaa472

017aaa471

DSon

(Ω)

2.5 V

DSon

2.0 V

2.3 V

(1)

3.0 V

4.5 V

(2)

10.0 V

(V)

0.05

0.10

0.15

0.20

(A)

T_j= 25 °C

I_D= 0.2 A

(1) T_j= 150 °C

(2) T_j= 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

2N7002NXAK

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Product data sheet

1 July 2019

7 / 14

1...4 5 678 9 10...14

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