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2N7002SGP PDF预览

2N7002SGP

更新时间: 2024-01-10 18:53:34
品牌 Logo 应用领域
力勤 - CHENMKO /
页数 文件大小 规格书
3页 382K
描述
Transistor,

2N7002SGP 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

2N7002SGP 数据手册

 浏览型号2N7002SGP的Datasheet PDF文件第2页浏览型号2N7002SGP的Datasheet PDF文件第3页 
CHENMKO ENTERPRISE CO.,LTD  
2N7002SGP  
SURFACE MOUNT  
Dual N-Channel Enhancement MOS FET  
VOLTAGE 60 Volts CURRENT 115 mAmpere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
FEATURE  
SC-88/SOT-363  
* Small surface mounting type. (SC-88/SOT-363)  
* High density cell design for low R  
* Suitable for high packing density.DS(ON).  
* Rugged and reliable.  
(1)  
(S1)  
(6)  
(D1)  
* High saturation current capability.  
* Voltage controlled small signal switch.  
(G1)  
0.65  
2.0~2.2  
0.65  
1.2~1.4  
(G2)  
(D2)  
(3)  
(S2)  
(4)  
0.15~0.35  
1.15~1.35  
0.08~0.15  
0.8~1.1  
0~0.1  
0.1 Min.  
(6)  
D1  
G2  
(4)  
S2  
2.15~2.45  
CIRCUIT  
(3)  
(1)  
D2  
SC-88/SOT-363  
S1 G1  
Dimensions in millimeters  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
2N7002SGP  
Symbol  
Parameter  
Units  
VDSS  
Drain-Source Voltage  
60  
60  
V
V
VDGR  
VGSS  
Drain-Gate Voltage (RGS = 1 M  
)
Gate-Source Voltage - Continuous  
±20  
V
- Non Repetitive (tp < 50µs)  
40  
±
TC= 25°C  
115  
75  
ID  
Maximum Drain Current -Continuous  
(Note1)  
(Note1)  
(Note2)  
mA  
-Continuous  
- Pulsed  
TC= 100°C  
TC= 25°C  
TA= 25°C  
800  
PD  
Maximum Power Dissipation (Note3)  
250  
mW  
°C  
TJ,TSTG  
Operating and Storage Temperature Range  
-55 to 150  
Note:  
1. The Power Dissipation of the package may result in a lower continuous drain current  
2. Pulse Test: Pulse Width  
< 300µs, Duty Cycle < 2.0%.  
3. for FR-5 board 1.0*0.75*0.062in.  
Thermal characteristics  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
328  
°C/W  
2009-09  

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