Datasheet > 2N7002NXAK

2N7002NXAK

更新时间： 2023-09-03 20:29:21

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	274K
描述
60 V, single N-channel Trench MOSFETProduction

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2N7002NXAK 数据手册

Nexperia

2N7002NXAK

60 V, single N-channel Trench MOSFET

10. Characteristics

Table 7. Characteristics

Symbol

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

V_GSth

gate-source threshold I_D= 250 µA; V_DS=V_GS; T_j= 25 °C

voltage

1.1

1.6

2.1

I_DSS

drain leakage current

V_DS= 60 V; V_GS= 0 V; T_j= 25 °C

V_DS= 60 V; V_GS= 0 V; T_j= 150 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

V_GS= 10 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

V_GS= 5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -5 V; V_DS= 0 V; T_j= 25 °C

V_GS= 10 V; I_D= 100 mA; T_j= 25 °C

V_GS= 10 V; I_D= 100 mA; T_j= 150 °C

V_GS= 5 V; I_D= 100 mA; T_j= 25 °C

V_DS= 10 V; I_D= 200 mA; T_j= 25 °C

µA

I_GSS

gate leakage current

-2

0.5

-0.5

100

-100

4.5

9.2

5.2

R_DSon

drain-source on-state

resistance

6.2

3.7

500

g_fs

forward

transconductance

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

V_DS= 30 V; I_D= 200 mA; V_GS= 4.5 V;

T_j= 25 °C

0.33

0.12

0.09

0.43

gate-source charge

gate-drain charge

input capacitance

output capacitance

V_DS= 10 V; f = 1 MHz; V_GS= 0 V;

T_j= 25 °C

C_oss

C_rss

3.4

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 40 V; R_L= 250 Ω; V_GS= 10 V;

R_G(ext)= 6 Ω; T_j= 25 °C

turn-off delay time

fall time

Source-drain diode

V_SD

source-drain voltage

I_S= 115 mA; V_GS= 0 V; T_j= 25 °C

0.47

0.8

1.2

2N7002NXAK

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Product data sheet

1 July 2019

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