Datasheet > 2N7002PV

2N7002PV

更新时间： 2023-09-03 20:32:53

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	267K
描述
60 V, 350 mA dual N-channel Trench MOSFETProduction

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7002PV 数据手册

2N7002PV

60 V, 350 mA dual N-channel Trench MOSFET

28 December 2022

Product data sheet

1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Very fast switching

Trench MOSFET technology

3. Applications

•

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_amb= 25 °C

-20

V_GS= 10 V; T_amb= 25 °C

[1]

350

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 500 mA; pulsed; t_p≤

300 µs; δ ≤ 0.01; T_j= 25 °C

1.6

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...14

下载PDF

与2N7002PV相关器件

型号	品牌	描述	获取价格	数据表
2N7002PW	NXP	60 V, 0.3 A N-channel Trench MOSFET	获取价格
2N7002PW,115	NXP	2N7002PW - 60 V, 310 mA N-channel Trench MOSFET SC-70 3-Pin	获取价格
2N7002Q	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002Q-7-F	DIODES	N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
2N7002S	ETC	SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere	获取价格
2N7002SESGP	CHENMKO	Transistor,	获取价格