Datasheet > 2N7002PV

2N7002PV

更新时间： 2023-09-03 20:32:53

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	267K
描述
60 V, 350 mA dual N-channel Trench MOSFETProduction

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2N7002PV 数据手册

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2N7002PV

60 V, 350 mA dual N-channel Trench MOSFET

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Per device

R_th(j-a)

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from in free air

junction to ambient

[1]

250

K/W

Per transistor

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

[2]

330

280

380

320

115

K/W

R_th(j-sp)

thermal resistance from

junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

017aaa064

duty cycle = 1

0.75

th(j-a)

(K/W)

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

- 3

- 2

- 1

(s)

FR4 PCB; standard footprint

Fig. 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

017aaa065

th(j-a)

duty cycle = 1

0.75

(K/W)

0.5

0.33

0.25

0.1

0.2

0.05

0.02

0.01

- 3

- 2

- 1

(s)

FR4 PCB, mounting pad for drain 1 cm²

Fig. 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

2N7002PV

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Product data sheet

28 December 2022

5 / 14

1 2 3 456 7 8...14

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