Datasheet > 2N7002PV

2N7002PV

更新时间： 2023-09-03 20:32:53

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	267K
描述
60 V, 350 mA dual N-channel Trench MOSFETProduction

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2N7002PV 数据手册

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2N7002PV

60 V, 350 mA dual N-channel Trench MOSFET

017aaa021

017aaa022

1.0

2.4

(A)

0.8

1.8

1.2

0.6

0.0

(1)

(2)

0.6

0.4

0.2

0.0

(2)

(1)

0.0

1.0

2.0

3.0

4.0

5.0

(V)

- 60

120

180

(°C)

amb

V_DS> I_D× R_DSon

(1) T_amb= 25 °C

(2) T_amb= 150 °C

Fig. 11. Normalized drain-source on-state resistance

as a function of ambient temperature; typical

values

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

017aaa023

017aaa024

3.0

GS(th)

(V)

(1)

(2)

(3)

(1)

(pF)

2.0

1.0

0.0

(2)

(3)

- 1

- 60

120

180

(°C)

amb

(V)

I_D= 0.25 mA; V_DS= V_GS

(1) maximum values

(2) typical values

f = 1 MHz; V_GS= 0 V

(1) C_iss

(2) C_oss

(3) minimum values

(3) C_rss

Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances

ambient temperature

as a function of drain-source voltage; typical

values

2N7002PV

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Product data sheet

28 December 2022

8 / 14

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