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2N7002K-AU_R2_000A1 PDF预览

2N7002K-AU_R2_000A1

更新时间: 2024-11-06 12:30:51
品牌 Logo 应用领域
强茂 - PANJIT 晶体晶体管开关光电二极管
页数 文件大小 规格书
7页 326K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002K-AU_R2_000A1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5Is Samacsys:N
其他特性:ULTRA LOW RESISTANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL参考标准:AEC-Q101; TS 16949
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002K-AU_R2_000A1 数据手册

 浏览型号2N7002K-AU_R2_000A1的Datasheet PDF文件第2页浏览型号2N7002K-AU_R2_000A1的Datasheet PDF文件第3页浏览型号2N7002K-AU_R2_000A1的Datasheet PDF文件第4页浏览型号2N7002K-AU_R2_000A1的Datasheet PDF文件第5页浏览型号2N7002K-AU_R2_000A1的Datasheet PDF文件第6页浏览型号2N7002K-AU_R2_000A1的Datasheet PDF文件第7页 
2N7002K-AU  
60V N-Channel Enhancement Mode MOSFET - ESD Protected  
Unitinch(mm)  
SOT-23  
FEATURES  
• RDS(ON), VGS@10V,IDS@500mA=3Ω  
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω  
0.120(3.04)  
0.110(2.80)  
• Advanced Trench Process Technology  
• High Density Cell Design For Ultra Low On-Resistance  
• Very Low Leakage Current In Off Condition  
• Specially Designed for Battery Operated Systems, Solid-State Relays  
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.  
• ESD Protected 2KV HBM  
0.056(1.40)  
0.047(1.20)  
• Acqire quality system certificate : TS16949  
0.008(0.20)  
0.003(0.08)  
0.079(2.00)  
0.070(1.80)  
AEC-Q101 qualified  
Lead free in comply with EU RoHS 2002/95/EC directives.  
• Green molding compound as per IEC61249 Std. . (Halogen Free)  
0.044(1.10)  
0.035(0.90)  
0.004(0.10)  
0.000(0.00)  
MECHANICAL DATA  
• Case: SOT-23 Package  
0.020(0.50)  
0.013(0.35)  
Terminals : Solderable per MIL-STD-750,Method 2026  
• Apporx. Weight: 0.0003 ounces, 0.0084 grams  
• Marking : K72  
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )  
PARAMETER  
Symbol  
VDS  
Limit  
60  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
VGS  
+20  
300  
V
mA  
ID  
1)  
Pulsed Drain Current  
IDM  
2000  
mA  
TA=25OC  
TA=75OC  
350  
210  
Maximum Power Dissipation  
PD  
mW  
OC  
Operating Junction and Storage Temperature Range  
Junction-to Ambient Thermal Resistance(PCB mounted)2  
TJ,TSTG  
-55 to + 150  
357  
RθJA  
OC/W  
Note: 1. Maximum DC current limited by the package  
2. Surface mounted on FR4 board, t < 5 sec  
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE  
October 29,2010-REV.02  
PAGE . 1  

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