Datasheet > 2N7002H

2N7002H

更新时间： 2024-04-09 18:58:15

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
9页	699K
描述
0.3A, 60V, 0.35W, N Channel, Small Signal MOSFETs

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2N7002H 数据手册

N-Channel Enhancement Mode MOSFET

2N7002H

DFN1006-3

SOT-723

0.50

0.40 0.40

IMPORTANT NOTICE

Galaxy Microelectronics (GME) reserves the right to make changes without further notice to any

product herein to make corrections, modifications , improvements , or other changes. GME does not

assume any liability arising out of the application or use of any product described herein; neither does

it convey any license under its patent rights ,nor the rights of others .

MTM0015A: August 2023 [2.8]

www.gmesemi.com

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型号	品牌	描述	获取价格	数据表
2N7002H-7	DIODES	Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, N-Channel, Silicon, Meta	获取价格
2N7002HE	Galaxy Microelectronics	0.4A, 60V, 0.5W, N Channel, Small Signal MOSFETs	获取价格
2N7002-HF	COMCHIP	MOSFET	获取价格
2N7002HL	Galaxy Microelectronics	0.3A, 60V, 0.15W, N Channel, Small Signal MOSFETs	获取价格
2N7002HS	NEXPERIA	60 V, dual N-channel Trench MOSFETProduction	获取价格
2N7002HT	Galaxy Microelectronics	0.3A, 60V, 0.15W, N Channel, Small Signal MOSFETs	获取价格