生命周期: | Transferred | 包装说明: | HERMETIC SEALED, TO-204, 2 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.64 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 11.3 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 14 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204 | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 56 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6768_10 | MICROSEMI | N-CHANNEL MOSFET |
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|
2N6768T1 | MICROSEMI | N-CHANNEL MOSFET |
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|
2N6768T1E3 | MICROSEMI | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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|
2N6769 | FAIRCHILD | N-Channel Power MOSFETs, 12A, 450V/500V |
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|
2N6769 | IXYS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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|
2N6769 | NJSEMI | FET DEVICES WITH N_CHANNEL POLARITY |
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