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2N6724LEADFREE PDF预览

2N6724LEADFREE

更新时间: 2024-02-19 13:51:28
品牌 Logo 应用领域
CENTRAL 放大器晶体管
页数 文件大小 规格书
3页 577K
描述
Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, TO-237, 3 PIN

2N6724LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-237AA
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.18最大集电极电流 (IC):2 A
集电极-发射极最大电压:40 V配置:DARLINGTON
最小直流电流增益 (hFE):4000JEDEC-95代码:TO-237AA
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1 MHz
Base Number Matches:1

2N6724LEADFREE 数据手册

 浏览型号2N6724LEADFREE的Datasheet PDF文件第2页浏览型号2N6724LEADFREE的Datasheet PDF文件第3页 
2N6724  
2N6725  
www.centralsemi.com  
SILICON  
NPN DARLINGTON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6724 and  
2N6725 are silicon NPN Darlington power transistors  
designed for amplifier applications.  
MARKING: FULL PART NUMBER  
TO-237 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
2N6724  
2N6725  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
50  
60  
V
CBO  
CEO  
EBO  
V
V
40  
50  
V
V
12  
2.0  
0.5  
2.0  
Continuous Collector Current  
Continuous Base Current  
I
A
C
I
A
B
Power Dissipation (T =25°C)  
C
P
W
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
62.5  
°C  
°C/W  
J
stg  
Thermal Resistance  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
2N6724  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=30V  
=40V  
=10V  
-
100  
-
-
nA  
CBO  
CBO  
EBO  
CB  
CB  
EB  
-
-
-
100  
-
-
-
100  
100  
-
nA  
nA  
V
BV  
BV  
BV  
I =1.0μA  
50  
40  
12  
-
60  
50  
12  
-
CBO  
CES  
C
I =1.0mA  
-
-
V
C
I =10μA  
-
-
V
EBO  
E
V
V
I =1.0A, I =2.0mA  
1.5  
2.0  
-
1.5  
2.0  
-
V
CE(SAT)  
BE(ON)  
FE  
C
B
V
=5.0V, I =1.0A  
-
-
V
CE  
CE  
CE  
CE  
CB  
C
h
h
V
V
V
V
=5.0V, I =200mA  
25K  
4K  
100  
-
25K  
4K  
100  
-
C
=5.0V, I =1.0A  
40K  
1K  
10  
40K  
1K  
10  
FE  
C
f
=5.0V, I =200mA, f=100MHz  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
ob  
E
R1 (31-July 2013)  

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