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2N6705 PDF预览

2N6705

更新时间: 2024-10-29 22:41:03
品牌 Logo 应用领域
CDIL 晶体放大器小信号双极晶体管功率放大器
页数 文件大小 规格书
3页 68K
描述
General Purpose Medium Power Amplifier

2N6705 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer零件包装代码:TO-237
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.54
Is Samacsys:N最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-237AA
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:1 VBase Number Matches:1

2N6705 数据手册

 浏览型号2N6705的Datasheet PDF文件第2页浏览型号2N6705的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS16949 and ISO 9001 Certified Company  
NPN SILICON PLANAR EPITAXIAL TRANSISTOR  
2N6705  
TO-237  
Plastic Package  
General Purpose Medium Power Amplifier  
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC)  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
V
V
A
Collector -Base Voltage  
Collector -Emitter Voltage  
Emitter Base Voltage  
Collector Current Continuous  
Total Power Dissipation  
Operating and Storage Junction  
Temperature Range  
60  
45  
5
1.5  
850  
PD  
Tj, Tstg  
mW  
ºC  
-55 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
45  
60  
5
MAX  
UNIT  
V
V
V
µA  
µA  
VCEO  
VCBO  
VEBO  
ICBO  
IEBO  
hFE  
IC=10mA, IB=0  
IC=100µA, IE=0  
IE=10µA, IC=0  
VCB=60V, IE=0  
VEB=4V, IC=0  
IC=50mA,VCE=2V  
IC=250mA,VCE=2V  
IC=500mA,VCE=2V  
Collector Emitter Voltage  
Collector -Base Voltage  
Emitter-Base Voltage  
Collector Cut off Current  
Emitter Cut off Current  
DC Current Gain  
0.1  
0.1  
40  
40  
25  
250  
VCE(sat) IC=500mA,IB=50mA  
IC=1A,IB=100mA  
Collector Emitter Saturation Voltage  
Transition Frequency  
0.5  
1
400  
V
V
MHz  
fT  
VCE=10V, IC=200mA,  
50  
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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