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2N6532 PDF预览

2N6532

更新时间: 2024-12-01 20:26:07
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 80K
描述
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2N6532 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.27
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):26 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

2N6532 数据手册

 浏览型号2N6532的Datasheet PDF文件第2页浏览型号2N6532的Datasheet PDF文件第3页 
DATA SHEET  
2N6530  
2N6531  
2N6532  
2N6533  
NPN POWER TRANSISTOR  
TO-220 CASE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power  
applications requiring extremely high gain.  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
2N6530 2N6531 2N6532 2N6533  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Power Dissipation  
V
V
V
V
V
80  
80  
80  
80  
100  
100  
100  
100  
100  
100  
100  
100  
120  
120  
120  
120  
V
CBO  
CER  
CEV  
CEO  
EBO  
V
V
V
V
A
A
W
5.0  
8.0  
15  
I
I
C
CM  
P
65  
D
Operating and Storage  
Junction Temperature  
T ,T  
J stg  
-65 to +150  
1.92  
°C  
°C/W  
Thermal Resistance  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
2N6530  
MIN MAX  
1.0  
2N6531  
MIN MAX  
1.0  
2N6532  
2N6533  
SYMBOL  
TEST CONDITIONS  
MIN MAX MIN MAX  
UNITS  
I
I
V
V
V
V
V
V
=Rated V  
=Rated V  
=1.5V  
1.0  
0.5  
1.0  
0.5  
mA  
CEO  
CEV  
CE  
CE  
EB  
CE  
EB  
EB  
CEO  
CEV,  
0.5  
0.5  
5.0  
5.0  
mA  
I
=Rated V  
5.0  
5.0  
5.0  
5.0  
5.0  
mA  
CEV  
CEV,  
=5.0V, T =125°C  
C
I
=5.0V  
5.0  
mA  
V
V
V
V
V
V
V
V
EBO  
BV  
BV  
BV  
I =200mA, R =100  
80  
80  
80  
100  
100  
100  
100  
120  
120  
120  
CER  
CEO  
CEV  
C
BE  
I =200mA  
100  
100  
C
I =200mA, V =1.5V  
C
EB  
V
V
V
V
V
V
I =3.0A, I =6.0mA  
3.0  
2.0  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
BE(ON)  
C
B
I =5.0A, I =10mA  
2.0  
3.0  
2.0  
3.0  
C
B
I =8.0A, I =80mA  
3.0  
2.8  
3.0  
2.8  
C
B
V
=3.0V, I =3.0A  
CE  
CE  
CE  
C
V
V
=3.0V, I =5.0A  
2.8  
4.5  
2.8  
4.5  
C
=3.0V, I =8.0A  
4.5  
4.5  
V
C
(CONTINUED ON REVERSE SIDE)  
R0  

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