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2N6504_06 PDF预览

2N6504_06

更新时间: 2024-11-04 03:56:23
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅整流器
页数 文件大小 规格书
7页 64K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS

2N6504_06 数据手册

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2N6504 Series  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supply crowbar circuits.  
http://onsemi.com  
Features  
Glass Passivated Junctions with Center Gate Fire for Greater  
Parameter Uniformity and Stability  
SCRs  
25 AMPERES RMS  
50 thru 800 VOLTS  
Small, Rugged, Thermowatt Constructed for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Blocking Voltage to 800 Volts  
300 A Surge Current Capability  
Pb−Free Packages are Available*  
G
A
K
MARKING  
DIAGRAM  
4
2N650xG  
AYWW  
TO−220AB  
CASE 221A  
STYLE 3  
1
2
3
x
A
Y
= 4, 5, 7, 8 or 9  
= Assembly Location  
= Year  
WW = Work Week  
= Pb−Free Device  
G
PIN ASSIGNMENT  
Cathode  
1
2
3
4
Anode  
Gate  
Anode  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 7  
2N6504/D  

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