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2N6504G PDF预览

2N6504G

更新时间: 2024-11-20 03:56:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器PC局域网
页数 文件大小 规格书
7页 64K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS

2N6504G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.06
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224335Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220AB CASE221A-07Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N外壳连接:ANODE
配置:SINGLE最大直流栅极触发电流:30 mA
最大直流栅极触发电压:1.5 V最大维持电流:40 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:2 mA
通态非重复峰值电流:250 A元件数量:1
端子数量:3最大通态电流:8000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:25 A
断态重复峰值电压:50 V重复峰值反向电压:50 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
触发设备类型:SCRBase Number Matches:1

2N6504G 数据手册

 浏览型号2N6504G的Datasheet PDF文件第2页浏览型号2N6504G的Datasheet PDF文件第3页浏览型号2N6504G的Datasheet PDF文件第4页浏览型号2N6504G的Datasheet PDF文件第5页浏览型号2N6504G的Datasheet PDF文件第6页浏览型号2N6504G的Datasheet PDF文件第7页 
2N6504 Series  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supply crowbar circuits.  
http://onsemi.com  
Features  
Glass Passivated Junctions with Center Gate Fire for Greater  
Parameter Uniformity and Stability  
SCRs  
25 AMPERES RMS  
50 thru 800 VOLTS  
Small, Rugged, Thermowatt Constructed for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Blocking Voltage to 800 Volts  
300 A Surge Current Capability  
Pb−Free Packages are Available*  
G
A
K
MARKING  
DIAGRAM  
4
2N650xG  
AYWW  
TO−220AB  
CASE 221A  
STYLE 3  
1
2
3
x
A
Y
= 4, 5, 7, 8 or 9  
= Assembly Location  
= Year  
WW = Work Week  
= Pb−Free Device  
G
PIN ASSIGNMENT  
Cathode  
1
2
3
4
Anode  
Gate  
Anode  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 7  
2N6504/D  

2N6504G 替代型号

型号 品牌 替代类型 描述 数据表
2N6509G LITTELFUSE

类似代替

该硅控整流器主要用于半波交流控制应用,例如电机控制、加热控制与电源消弧电路。 功能与特色:

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