5秒后页面跳转
2N6404G PDF预览

2N6404G

更新时间: 2024-11-20 12:52:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
7页 114K
描述
Silicon Controlled Rectifiers

2N6404G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:CASE 221A-09, 3 PIN针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
Factory Lead Time:1 week风险等级:5.08
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224332Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220AB CASE221A-07Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N外壳连接:ANODE
标称电路换相断开时间:35 µs配置:SINGLE
最大直流栅极触发电流:30 mA最大直流栅极触发电压:1.5 V
最大维持电流:80 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大漏电流:2 mA通态非重复峰值电流:250 A
元件数量:1端子数量:3
最大通态电流:16000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:16 A断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:SCR
Base Number Matches:1

2N6404G 数据手册

 浏览型号2N6404G的Datasheet PDF文件第2页浏览型号2N6404G的Datasheet PDF文件第3页浏览型号2N6404G的Datasheet PDF文件第4页浏览型号2N6404G的Datasheet PDF文件第5页浏览型号2N6404G的Datasheet PDF文件第6页浏览型号2N6404G的Datasheet PDF文件第7页 
2N6400 Series  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls and power supplies; or wherever  
halfwave silicon gatecontrolled, solidstate devices are needed.  
http://onsemi.com  
Features  
SCRs  
16 AMPERES RMS  
50 thru 800 VOLTS  
Glass Passivated Junctions with Center Gate Geometry for Greater  
Parameter Uniformity and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
Blocking Voltage to 800 V  
G
A
K
These are PbFree Devices  
MAXIMUM RATINGS* (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive OffState Voltage (Note 1)  
J
V
V
V
DRM,  
4
(T = *40 to 125°C, Sine Wave 50 to 60  
RRM  
Hz; Gate Open)  
2N6400  
50  
100  
200  
400  
600  
800  
2N6401  
TO220AB  
CASE 221A  
STYLE 3  
2N640xG  
AYWW  
2N6402  
2N6403  
2N6404  
2N6405  
1
On-State Current RMS (180° Conduction  
I
16  
A
A
A
T(RMS)  
Angles; T = 100°C)  
2
C
3
Average On-State Current (180° Conduc-  
I
T(AV)  
10  
tion Angles; T = 100°C)  
C
x
= 0, 1, 2, 3, 4 or 5  
Peak Non-repetitive Surge Current (1/2  
I
160  
TSM  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Cycle, Sine Wave 60 Hz, T = 25°C)  
J
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
145  
20  
A s  
= PbFree Package  
Forward Peak Gate Power (Pulse Width ≤  
P
W
W
A
GM  
1.0 ms, T = 100°C)  
C
Forward Average Gate Power (t = 8.3 ms,  
P
0.5  
2.0  
G(AV)  
PIN ASSIGNMENT  
Cathode  
T
C
= 100°C)  
1
2
3
4
Forward Peak Gate Current (Pulse Width ≤  
I
GM  
Anode  
1.0 ms, T = 100°C)  
C
Gate  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
40 to  
+125  
°C  
°C  
Anode  
T
stg  
40 to  
+150  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2012 Rev. 6  
2N6400/D  
 

2N6404G 替代型号

型号 品牌 替代类型 描述 数据表
2N6509G LITTELFUSE

类似代替

该硅控整流器主要用于半波交流控制应用,例如电机控制、加热控制与电源消弧电路。 功能与特色:
TYN616RG STMICROELECTRONICS

功能相似

16A SCRs

与2N6404G相关器件

型号 品牌 获取价格 描述 数据表
2N6404-L MOTOROLA

获取价格

16A, 600V, SCR, TO-220AB
2N6404-N MOTOROLA

获取价格

16A, 600V, SCR, TO-220AB
2N6404-S MOTOROLA

获取价格

Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
2N6404-T MOTOROLA

获取价格

Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
2N6404-U MOTOROLA

获取价格

Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
2N6404-U2 MOTOROLA

获取价格

暂无描述
2N6404-UA MOTOROLA

获取价格

16A, 600V, SCR, TO-220AB
2N6404-W MOTOROLA

获取价格

Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
2N6404-WC MOTOROLA

获取价格

16A, 600V, SCR, TO-220AB
2N6405 NJSEMI

获取价格

SILICON CONTROLLED RECTIFIERS