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2N6388 PDF预览

2N6388

更新时间: 2024-11-17 22:49:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 52K
描述
SILICON NPN POWER DARLINGTON TRANSISTOR

2N6388 数据手册

 浏览型号2N6388的Datasheet PDF文件第2页浏览型号2N6388的Datasheet PDF文件第3页浏览型号2N6388的Datasheet PDF文件第4页 
2N6388  
®
SILICON NPN POWER DARLINGTON TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN DARLINGTON  
HIGH CURRENT CAPABILITY  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
DESCRIPTION  
The device is a silicon epitaxial-base NPN power  
transistor in monolithic Darlington configuration  
mounted in Jedec TO-220 plastic package.  
3
2
1
It is inteded for use in low and medium frequency  
power applications.  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
R1 Typ. = 10 KΩ  
R2 Typ. = 160 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEV  
VCER  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IB = 0)  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Emitter Voltage (RBE 100)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
V
80  
80  
V
80  
V
80  
V
5
10  
V
A
ICM  
Collector Peak Current  
15  
A
IB  
Base Current  
0.25  
65  
A
o
Ptot  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Tstg  
Storage Temperature  
-65 to 150  
150  
Tj  
Max. Operating Junction Temperature  
1/4  
April 1999  

2N6388 替代型号

型号 品牌 替代类型 描述 数据表
2N6388G ONSEMI

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Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8
BDX33BG ONSEMI

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