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2N6383 PDF预览

2N6383

更新时间: 2024-11-19 22:49:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管局域网
页数 文件大小 规格书
2页 59K
描述
NPN DARLINGTON POWER SILICON TRANSISTOR

2N6383 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.12
最大集电极电流 (IC):10 A集电极-发射极最大电压:40 V
配置:DARLINGTON最小直流电流增益 (hFE):100
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

2N6383 数据手册

 浏览型号2N6383的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN DARLINGTON POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 523  
Devices  
Qualified Level  
JAN, JANTX  
JANTXV  
2N6383  
2N6384  
2N6385  
MAXIMUM RATINGS  
Ratings  
Symbol 2N6383 2N6384 2N6385 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
40  
60  
80  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
40  
60  
80  
5.0  
0.25  
10  
Collector Current  
IC  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +250C (2)  
6.0  
100  
W
W
0C  
PT  
Operating & Storage Temperature  
-55 to +175  
Top, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
TO-3* (TO-204AA)  
Thermal Resistance Junction-to-Case  
1.75  
R
qJC  
1) Derate linearly 34.2 mW/0C above TA > +250C  
2) Derate linearly 571 mW/0C above TC > +250C  
*See Appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc  
40  
60  
80  
2N6383  
2N6384  
2N6385  
Vdc  
V(BR)  
CEO  
Collector-Emitter Breakdown Voltage  
40  
60  
80  
IC = 200 mAdc, RBB = 100 W  
2N6383  
2N6384  
2N6385  
Vdc  
V(BR)  
CER  
Collector-Base Cutoff Current  
VCE = 40 Vdc  
VCE = 60 Vdc  
1.0  
1.0  
1.0  
2N6383  
2N6384  
2N6385  
mAdc  
ICBO  
VCE = 80 Vdc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

2N6383 替代型号

型号 品牌 替代类型 描述 数据表
2N5877 MICROSEMI

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