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2N6384 PDF预览

2N6384

更新时间: 2024-11-20 05:57:47
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无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
3页 119K
描述
Silicon NPN Power Transistors

2N6384 数据手册

 浏览型号2N6384的Datasheet PDF文件第2页浏览型号2N6384的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6383 2N6384 2N6385  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N6648/6649/6650  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·Designed for low and medium frequency  
power application such as power switching  
audio amplifer ,hammer drivers and shunt  
and series regulators  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
40  
UNIT  
2N6383  
2N6384  
2N6385  
2N6383  
2N6384  
2N6385  
VCBO  
Collector-base voltage  
Open emitter  
V
60  
80  
40  
VCEO  
Collector-emitter voltage  
Open base  
V
60  
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
10  
Collector current-peak  
Base current  
15  
A
0.25  
100  
200  
-65~200  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.75  
/W  

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