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2N6274 PDF预览

2N6274

更新时间: 2024-02-12 23:09:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
6页 172K
描述
POWER TRANSISTORS NPN SILICON

2N6274 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BFM
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.26外壳连接:COLLECTOR
最大集电极电流 (IC):50 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-204AEJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz

2N6274 数据手册

 浏览型号2N6274的Datasheet PDF文件第2页浏览型号2N6274的Datasheet PDF文件第3页浏览型号2N6274的Datasheet PDF文件第4页浏览型号2N6274的Datasheet PDF文件第5页浏览型号2N6274的Datasheet PDF文件第6页 
Order this document  
by 2N6274/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in industrial–military power amplifer and switching circuit  
applications.  
*Motorola Preferred Device  
High Collector Emitter Sustaining —  
50 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
100, 120, 140, 150 VOLTS  
250 WATTS  
V
V
V
= 100 Vdc (Min) — 2N6274  
= 120 Vdc (Min) — 2N6275  
= 150 Vdc (Min) — 2N6277  
CEO(sus)  
CEO(sus)  
CEO(sus)  
High DC Current Gain —  
h
FE  
h
FE  
= 30–120 @ I = 20 Adc  
C
= 10 (Min) @ I = 50 Adc  
C
Low Collector–Emitter Saturation Voltage —  
= 1.0 Vdc (Max) @ I = 20 Adc  
V
CE(sat)  
C
Fast Switching Times @ I 20 Adc  
C
t = 0.35 µs (Max)  
r
t = 0.8 µs (Max)  
s
t = 0.25 µs (Max)  
f
Complement to 2N6377–79  
CASE 197A–05  
TO–204AE  
(TO–3)  
MAXIMUM RATINGS(1)  
Rating  
Symbol 2N6274 2N6275 2N6277  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
120  
100  
140  
120  
6.0  
180  
150  
CB  
V
CEO  
V
EB  
Collector Current — Continuous  
Peak  
I
C
50  
100  
Base Current  
I
B
20  
Adc  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
250  
1.43  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +200  
C
J
stg  
THERMAL CHARACTERISTIC  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
θ
0.7  
C/W  
JC  
250  
200  
150  
100  
50  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
T
, CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

2N6274 替代型号

型号 品牌 替代类型 描述 数据表
2N6341G ONSEMI

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