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2N6122 PDF预览

2N6122

更新时间: 2024-11-27 22:35:51
品牌 Logo 应用领域
统懋 - MOSPEC 晶体晶体管
页数 文件大小 规格书
4页 194K
描述
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

2N6122 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
最大集电极电流 (IC):4 A配置:Single
最小直流电流增益 (hFE):25最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):40 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):2.5 MHzBase Number Matches:1

2N6122 数据手册

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与2N6122相关器件

型号 品牌 获取价格 描述 数据表
2N6122-6200 RENESAS

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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2N6122-6203 RENESAS

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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2N6122-6226 RENESAS

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4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6122-6255 RENESAS

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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2N6122-6264 RENESAS

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4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6122-DR6259 RENESAS

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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2N6122-DR6260 RENESAS

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4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6122-DR6269 RENESAS

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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2N6122-DR6274 RENESAS

获取价格

4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6122LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti