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2N6123-6226 PDF预览

2N6123-6226

更新时间: 2024-11-29 08:20:59
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网开关晶体管
页数 文件大小 规格书
3页 119K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

2N6123-6226 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.69
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):7JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:40 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONVCEsat-Max:1.4 V

2N6123-6226 数据手册

 浏览型号2N6123-6226的Datasheet PDF文件第2页浏览型号2N6123-6226的Datasheet PDF文件第3页 

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