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2N5551_J18Z PDF预览

2N5551_J18Z

更新时间: 2024-11-18 19:43:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
5页 167K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3

2N5551_J18Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:LEAD FREE PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.03最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5551_J18Z 数据手册

 浏览型号2N5551_J18Z的Datasheet PDF文件第2页浏览型号2N5551_J18Z的Datasheet PDF文件第3页浏览型号2N5551_J18Z的Datasheet PDF文件第4页浏览型号2N5551_J18Z的Datasheet PDF文件第5页 
June 2009  
2N5551 / MMBT5551  
NPN General Purpose Amplifier  
Features  
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.  
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)  
• Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)  
2N5551  
MMBT5551  
3
2
TO-92  
SOT-23  
1
Marking: 3S  
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings * TA = 25°C unless otherwise noted  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Value  
160  
Units  
V
180  
V
Emitter-Base Voltage  
6.0  
V
Collector current - Continuous  
Junction and Storage Temperature  
600  
mA  
°C  
TJ, Tstg  
-55 to +150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics TA=25°C unless otherwise noted  
Max  
Symbol  
Parameter  
Total Device Dissipation  
Units  
2N5551  
*MMBT5551  
PD  
625  
5.0  
350  
2.8  
mW  
mW/°C  
Derate above 25°C  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
357  
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."  
© 2009 Fairchild Semiconductor Corporation  
2N5551 / MMBT5551 Rev. B1  
www.fairchildsemi.com  
1

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