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2N5458G PDF预览

2N5458G

更新时间: 2024-12-02 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关小信号场效应晶体管
页数 文件大小 规格书
4页 60K
描述
25 V N 沟道 JFET 晶体管

2N5458G 技术参数

是否无铅:不含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:LEAD FREE, PLASTIC, CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.05Is Samacsys:N
其他特性:LOW NOISE配置:SINGLE
最小漏源击穿电压:25 VFET 技术:JUNCTION
最大反馈电容 (Crss):3 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.31 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N5458G 数据手册

 浏览型号2N5458G的Datasheet PDF文件第2页浏览型号2N5458G的Datasheet PDF文件第3页浏览型号2N5458G的Datasheet PDF文件第4页 
2N5457, 2N5458  
2N5457 and 2N5458 are Preferred Devices  
JFETs - General Purpose  
N–Channel – Depletion  
N–Channel Junction Field Effect Transistors, depletion mode (Type  
A) designed for audio and switching applications.  
http://onsemi.com  
N–Channel for Higher Gain  
Drain and Source Interchangeable  
High AC Input Impedance  
1 DRAIN  
High DC Input Resistance  
3
GATE  
Low Transfer and Input Capacitance  
Low Cross–Modulation and Intermodulation Distortion  
Unibloc Plastic Encapsulated Package  
2 SOURCE  
MAXIMUM RATINGS  
TO–92  
CASE 29  
STYLE 5  
Rating  
Drain–Source Voltage  
Drain–Gate Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
1
2
V
DS  
3
V
DG  
25  
Vdc  
MARKING DIAGRAMS  
Reverse Gate–Source Voltage  
Gate Current  
V
–25  
10  
Vdc  
GSR  
I
G
mAdc  
2N  
2N  
5457  
YWW  
5458  
YWW  
Total Device Dissipation  
P
D
@ T = 25°C  
310  
2.82  
mW  
mW/°C  
A
Derate above 25°C  
Operating Junction Temperature  
T
135  
°C  
°C  
J
Storage Temperature Range  
T
stg  
–65 to +150  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
Device  
2N5457  
2N5458  
Package  
TO–92  
Shipping  
5000 Units/Box  
5000 Units/Box  
TO–92  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
September, 2001 – Rev. 3  
2N5457/D  

2N5458G 替代型号

型号 品牌 替代类型 描述 数据表
2N5458 ONSEMI

类似代替

JFETs - General Purpose
2N5458 CENTRAL

功能相似

Junction FETs Low Frequency/ Low Noise
2N5458 FAIRCHILD

功能相似

N-Channel General Purpose Amplifier

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