Datasheet > 2N5416

2N5416

更新时间： 2024-02-14 21:32:37

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
4页	69K
描述
SILICON PNP TRANSISTORS

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技术参数
数据手册

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2N5416 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.74	Base Number Matches：	1

2N5416 数据手册

2N5415 / 2N5416

THERMAL DATA

R_thj-caseThermal Resistance Junction-case

R_thj-ambThermal Resistance Junction-ambient

Max

17.5

175

^oC/W

ELECTRICAL CHARACTERISTICS (T_case= 25 ^oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I_CBO

Collector Cut-off

Current (I_E= 0)

for 2N5415 V_CB= -175 V

for 2N5416 V_CB= -280 V

-50

µA

I_CEO

I_EBO

Collector Cut-off

Current (I_B= 0)

V_CE= -150 V

-50

µA

Emitter Cut-off Current for 2N5415 V_EB= -4 V

(I_C= 0)

-20

µA

for 2N5416 V_EB= -6 V

V_CER

Collector-Emitter

I_C= -50 mA R_BE= 50Ω for 2N5416 -350

Sustaining Voltage

V_CEO(sus)Collector-Emitter

Sustaining Voltage

I_C= -10 mA

for 2N5415

for 2N5416

-200

-300

V_CE(sat)

Collector-Emitter

Saturation Voltage

I_C= -50 mA

I_B= -5 mA

-2.5

-1.5

V_BE

h_FE

Base-Emitter Voltage

DC Current Gain

I_C= -50 mA

V_CE= -10 V

I_C= -50 mA

for 2N5415

for 2N5416

150

120

h_fe

Small Signal Current

Gain

I_C= -5 mA V_CE= -10 V f = 1KHz

f_T

Transition frequency

I_C= -10 mA V_CE= -10 V f = 5MHz

MHz

C_CBO

Collector Base

Capacitance

I_E= 0

V_CB= -10 V

f = 1MHz

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

2/4

123 4

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