2N5416S

更新时间： 2024-01-29 07:01:44

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体小信号双极晶体管
页数	文件大小	规格书
2页	61K
描述
PNP LOW POWER SILICON TRANSISTOR

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技术参数
数据手册

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2N5416S 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.74	Base Number Matches：	1

2N5416S 数据手册

TECHNICAL DATA

PNP LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 485

Devices

Qualified Level

JAN

JANTX

JANTXV

2N5415

2N5415S

2N5416

2N5416S

MAXIMUM RATINGS

Ratings

Symbol 2N5415 2N5416 Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

200

300

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_C

200

350

6.0

1.0

TO- 5*

2N5415, 2N5416

Total Power Dissipation @ T_A= +25⁰C

@ T_C= +25⁰C

0.75

⁰C

P_T

Operating & Storage Temperature Range

-65 to +200

T_op_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

17.5

qJC

2N5415S, 2N5416S

TO-39*

(TO-205AD)

*See appendix A for

1) Derate linearly 4.28 mW/⁰C for T_A> +25⁰C

2) Derate linearly 57.1 mW/⁰C for T_C> +25⁰C

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Cutoff Current

V_CE= 150 Vdc

V_CE= 200 Vdc

V_CE= 250 Vdc

V_CE= 300 Vdc

mAdc

2N5415

2N5416

1.0

I_CEO

1.0

Emitter-Base Cutoff Current

V_EB= 6.0 Vdc

I_EBO

mAdc

Collector-Emitter Cutoff Current

V_CE= 200 Vdc, V_BE= 1.5 Vdc

V_CE= 300 Vdc, V_BE= 1.5 Vdc

Collector-Base Cutoff Current

V_CB= 175 Vdc

V_CB= 280 Vdc

Collector-Base Cutoff Current

V_CB= 200 Vdc

mAdc

2N5415

2N5416

I_CEX

mAdc

2N5415

2N5416

I_CBO1

2N5415

2N5416

I_CBO2

500

V_CB= 350 Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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