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2N5427 PDF预览

2N5427

更新时间: 2024-11-27 06:17:43
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页数 文件大小 规格书
3页 116K
描述
Silicon NPN Power Transistors

2N5427 数据手册

 浏览型号2N5427的Datasheet PDF文件第2页浏览型号2N5427的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5427 2N5429  
DESCRIPTION  
·With TO-66 package  
·Excellent safe operating area  
·Low collector saturation voltage  
APPLICATIONS  
·For switching and wide-band  
amplifier applications.  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N5427  
2N5429  
2N5427  
2N5429  
80  
100  
80  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
100  
6
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
W
7
IB  
Base current  
1
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
40  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
4.37  
/W  

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