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2N5427 PDF预览

2N5427

更新时间: 2024-11-27 06:23:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
2页 49K
描述
isc Silicon NPN Power Transistor

2N5427 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.55
Is Samacsys:NBase Number Matches:1

2N5427 数据手册

 浏览型号2N5427的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2N5427  
DESCRIPTION  
·Contunuous Collector Current-IC= 7A  
·Low Collector-Emitter Saturation Voltage-  
: VCE(sat)= 1.2V(Max) @IC= 7A  
·Wide Area of Safe Operation  
APPLICATIONS  
·Designed for switching and wide-band amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
6
V
Collector Current-Continuous  
Base Current-Continuous  
Collector Power Dissipation@TC=25  
Junction Temperature  
7
1
A
IB  
A
PC  
40  
W
TJ  
200  
-65~200  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
4.37  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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