Datasheet > 2N5154N1B_11

2N5154N1B_11

更新时间： 2024-11-12 07:28:47

品牌	Logo	应用领域
SEME-LAB		晶体晶体管
页数	文件大小	规格书
3页	339K
描述
SILICON EPITAXIAL NPN TRANSISTOR

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数据手册

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2N5154N1B_11 数据手册

SILICON EPITAXIAL

NPN TRANSISTOR

2N5154N1B

•

Hermetic Ceramic Surface Mount SMD0.5 Package

•

High Reliability and Space Screening Options Available

ABSOLUTE MAXIMUM RATINGS ^(T= 25°C unless otherwise stated)

Collector – Base Voltage (I = 0)

Collector – Emitter Voltage (I = 0)

100V

CBO

CEO

EBO

80V

Emitter – Base Voltage

5.5V

Continuous Collector Current

Peak Collector Current ⁽¹⁾

10A

T = 25°C

Total Power Dissipation at

70W

Derate Above 25°C

400 mW/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ. Max. Units

Thermal Resistance, Junction To Case (T = 25°C)

2.5

°C/W

θJC

(1)

This value applies for Pw ≤ 8.3ms, duty cycle ≤ 1%.

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 9104

Issue 2

Page 1 of 3

Website: http://www.semelab-tt.com

12 3

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