Datasheet > 2N5157

2N5157

更新时间： 2024-11-12 07:28:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	39K
描述
Silicon NPN Power Transistors

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2N5157 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5157

DESCRIPTION

·With TO-3 package

·High breakdown voltage

APPLICATIONS

·Switching regulator

·Inverters

·Solenoid and relay drivers

·Motor controls

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

700

UNIT

Open base

500

Open collector

3.5

P_T

Total power dissipation

Junction temperature

Storage temperature

T_c=25℃

100

℃

T_j

165

T_stg

-65~200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.0

℃/W

12 3

中文翻译

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