Datasheet > 2N4906

2N4906

更新时间： 2025-09-24 18:25:07

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
5页	747K
描述
Polarity : PNP; Type : High Power; Power Dissipation : 87.5; Maximum Collector Current : 5; Maximu

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N4906 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
最大集电极电流 (IC)：	5 A	配置：	Single
最小直流电流增益 (hFE)：	25	最高工作温度：	175 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	87 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	4 MHz	Base Number Matches：	1

2N4906 数据手册

2N4904-2N4906

PNP SILICON MEDIUM POWER TRANSISTORS

High-reliability discrete products

and engineering services since 1977

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

V_CEO

V_CB

2N4904

2N4905

2N4906

Unit

Vdc

Adc

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current – continuous

Base current

V_EB

5.0

I_C

5.0

I_B

1.0

Total device dissipation T_C= 25°C

Derate above 25°C

87.5

0.5

Watts

W/°C

P_D

Operating and storage junction temperature range

Thermal resistance, junction to case

T_J, T_stg

-65 to +200

2.0

°C

Ө_JC

°C/W

ELECTRICAL CHARACTERSITICS (T_A= 25°C unless otherwise specified)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector emitter sustaining voltage

(I_C= 0.2Adc, I_B= 0)

2N4904

2N4905

2N4906

B_VCEO(sus)

Vdc

Collector cutoff current

(V_CE= Rated V_CEO, I_B= 0)

I_CEO

mAdc

1.0

Collector cutoff current

(V_CE= Rated V_CEO, V_BE(off)= 1.5Vdc)

(V_CE= Rated V_CEO, V_BE(off)= 1.5Vdc, T_C= 150°C)

I_CEX

1.0

2.0

Collector cutoff current

(V_CB= Rated V_CB, I_E= 0)

I_CBO

mAdc

1.0

Emitter cutoff current

(V_EB= 5.0Vdc, I_C= 0)

I_EBO

ON CHARACTERISTICS

DC current gain ⁽¹⁾

(I_C= 2.5Adc, V_CE= 2.0Vdc)

(I_C= 5.0Adc, V_CE= 2.0Vdc)

h_FE

7.0

100

Collector emitter saturation voltage

(I_C= 2.5Adc, I_B= 250mAdc)

(I_C=5.0Adc, I_B= 1.0Adc)

V_CE(sat)

1.0

1.5

Vdc

Base emitter saturation voltage

(I_C= 2.5Adc, V_CE= 2.0Adc)

V_BE(sat)

1.4

SMALL SIGNAL CHARACTERISTICS

Current gain - bandwidth product

(I_C= 1.0Adc, V_CE= 10Vdc, f = 1.0MHz)

f_T

MHz

4.0

Rev. 20200609

12 3 4 5

中文翻译

下载PDF

与2N4906相关器件

型号	品牌	获取价格	描述	数据表
2N4906E3	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
2N4906LEADFREE	CENTRAL	获取价格	暂无描述
2N4906PBFREE	CENTRAL	获取价格	Power Bipolar Transistor,
2N4907	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
2N4907	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N4907	APITECH	获取价格	Transistor,
2N4908	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
2N4908	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N4908	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
2N4908	APITECH	获取价格	Transistor