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2N4403RLRAG PDF预览

2N4403RLRAG

更新时间: 2024-11-23 21:54:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关
页数 文件大小 规格书
8页 107K
描述
General Purpose Transistors

2N4403RLRAG 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:5
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):255 ns
最大开启时间(吨):35 nsBase Number Matches:1

2N4403RLRAG 数据手册

 浏览型号2N4403RLRAG的Datasheet PDF文件第2页浏览型号2N4403RLRAG的Datasheet PDF文件第3页浏览型号2N4403RLRAG的Datasheet PDF文件第4页浏览型号2N4403RLRAG的Datasheet PDF文件第5页浏览型号2N4403RLRAG的Datasheet PDF文件第6页浏览型号2N4403RLRAG的Datasheet PDF文件第7页 
2N4403  
Preferred Device  
General Purpose  
Transistors  
PNP Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
COLLECTOR  
3
MAXIMUM RATINGS  
2
BASE  
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Total Device Dissipation  
V
CEO  
V
CBO  
1
40  
Vdc  
EMITTER  
V
EBO  
5.0  
Vdc  
I
C
600  
mAdc  
P
D
D
MARKING  
DIAGRAM  
625  
5.0  
mW  
mW/°C  
@ T = 25°C  
Derate above 25°C  
A
1
2
Total Device Dissipation  
@ T = 25°C  
Derate above 25°C  
P
2N  
4403  
YWW  
1.5  
12  
W
mW/°C  
C
3
TO−92  
CASE 29  
STYLE 1  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
Maximumratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
Y
WW  
= Year  
= Work Week  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
200  
°C/W  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
83.3  
°C/W  
Preferred devices are recommended choices for future  
use and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 1  
2N4403/D  

2N4403RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
2N4403RLG ONSEMI

类似代替

600mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226AA, 3 PI
2N4403G ONSEMI

类似代替

General Purpose Transistors
2N4403BU FAIRCHILD

功能相似

PNP General Purpose Amplifier

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SOT-23(1)