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2N4403RLRM PDF预览

2N4403RLRM

更新时间: 2024-11-20 03:56:15
品牌 Logo 应用领域
强茂 - PANJIT 晶体小信号双极晶体管放大器
页数 文件大小 规格书
1页 66K
描述
General Purpose Transistors PNP Silicon

2N4403RLRM 数据手册

  
Transys  
Electronics  
L
I M I T E D  
TO-92 Plastic-Encapsulated Transistors  
2N4403  
TRANSISTOR (PNP)  
TO—92  
FEATURES  
Power dissipation  
PCM  
Collector current  
ICM  
Collector-base voltage  
V(BR)CBO : -40  
:
0.625 W (Tamb=25)  
1.EMILTTER  
2.BASE  
:
-0.6  
A
V
3. COLLECTOR  
1 2 3  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-100µA , IE=0  
IC= -1mA , IB=0  
IE=-100µA, IC=0  
VCB=-35 V, IE=0  
VCE=-35 V, IB=0  
VEB=-4V, IC=0  
MIN  
MAX  
UNIT  
V
Parameter  
-40  
-40  
-5  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
-0.1  
-0.1  
-0.1  
µA  
µA  
µA  
ICEO  
Collector cut-off current  
IEBO  
Emitter cut-off current  
hFE(1)  
DC current gain  
V
CE=-2 V, IC=- 150mA  
100  
200  
300  
-0.4  
VCE(sat)  
VBE(sat)  
IC=-150 mA, IB=-15mA  
IC= -150 mA, IB=-15mA  
V
V
Collector-emitter saturation voltage  
-0.95  
Base-emitter saturation voltage  
Transition frequency  
VCE= -10V, IC= -20mA  
MHz  
f T  
f = 100MHz  

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