2N4403
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
–VCE = 1 V, –IC = 0.1 mA
–VCE = 1 V, –IC = 1 mA
–VCE = 1 V, –IC = 10 mA
–VCE = 2 V, –IC = 150 mA
–VCE = 2 V, –IC = 500 mA
30
60
100
100
20
—
—
—
—
—
—
—
—
300
—
DC Current Gain
hFE
—
Collector Cutoff Current
Base Cutoff Current
–ICEV –VEB = 0.4 V, –VCE = 35 V
—
—
—
—
100
100
nA
nA
–IBEV
–VEB = 0.4 V, –VCE = 35 V
–IC = 150 mA, –IB = 15 mA
–IC = 500 mA, –IB = 50 mA
—
—
—
—
0.40
0.75
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
–VCEsat
V
V
–IC = 150 mA, –IB = 15 mA
–IC = 500 mA, –IB = 50 mA
0.75
—
—
—
0.95
1.30
–VBEsat
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
–V(BR)CEO
–V(BR)CBO
–V(BR)EBO
–IC = 1 mA, IB = 0
–IC = 0.1 mA, IE = 0
–IE = 0.1 mA, IC = 0
40
40
—
—
—
—
—
—
V
V
V
5.0
–VCE = 10 V, –IC = 1 mA,
Input Impedance
hie
hre
1.5
0.1 • 10-4
200
—
—
—
—
—
—
—
—
15
8• 10-4
—
kΩ
—
f = 1 kHz
–VCE = 10 V, –IC = 1 mA,
Voltage Feedback Ratio
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small Signal Current Gain
Output Admittance
f = 1 kHz
–VCE = 10 V, –IC = 20 mA
fT
MHz
pF
f = 100 MHz
–VCB = 10 V, IE = 0,
CCB
CEB
hfe
8.5
f = 1.0 MHz
–VEB = 0.5 V, IC = 0
—
30
pF
f = 1.0 MHz
–VCE = 10 V, –IC = 1 mA
60
500
100
—
f = 1 kHz
–VCE = 10 V, –IC = 1 mA
hoe
1.0
µS
f = 1 kHz
Notes:
(1) Pulse test: Pulse width ≤ 300µs - Duty cycle ≤ 2%
www.vishay.com
2
Document Number 88118
08-May-02