Datasheet > 2N4403A3

2N4403A3

更新时间： 2024-01-12 00:46:17

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	156K
描述
General Purpose PNP Epitaxial Planar Transistor

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2N4403A3 数据手册

Spec. No. : C305A3

Issued Date : 2003.06.13

CYStech Electronics Corp.

Revised Date : 2004.02.23

Page No. : 1/4

General Purpose PNP Epitaxial Planar Transistor

2N4403A3

Description

• The2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification.

• Large I_C, I_{C Max}.= -0.6A

• Low V_CE(sat), typically -0.2V at I /I = -300mA / -30mA. Ideal for low-Voltage operation

C B

• Complementary to 2N4401A3

Symbol

Outline

2N4403A3

TO-92

B：Base

C：Collector

E：Emitter

E B C

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V^CBO

V^CEO

V^EBO

I^C

-40

-5

Collector Current

-0.6

Power Dissipation

625

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

R^θJA

Tstg

200

150

-55~+150

°C

2N4403A3

CYStek Product Specification

12 3 4

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